Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

被引：7

作者：

Banzhaf, C. T. ^{[1
]}

Grieb, M. ^{[1
]}

Trautmann, A. ^{[1
]}

Bauer, A. J. ^{[2
]}

Frey, L. ^{[2
,3
]}

机构：

[1] Robert Bosch GmbH, D-70839 Gerlingen, Germany

[2] Fraunhofer Inst Intedrated Syst & Device Technol, Erlangen 91058, Germany

[3] Univ Erlangen Nurnberg, Chair Electg Devices, Erlangen 91058, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

4H; SiC; 3D; MOS; trench; oxide; interface; breakdown; quality;

D O I：

10.4028/www.scientific.net/MSF.740-742.691

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (D-IT) of 1(*)10(11) cm(-2) eV(-1) under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.

引用

页码：691 / +

页数：2

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