Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating β-Ga2O3 single crystal along [100], [010] and [001]

被引:41
作者
Handwerg, M. [1 ,2 ]
Mitdank, R. [1 ]
Galazka, Z. [3 ]
Fischer, S. F. [1 ]
机构
[1] Humboldt Univ, AG Neue Mat, Inst Phys, Newtonstr 15, D-12489 Berlin, Germany
[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany
[3] Leibniz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin, Germany
关键词
beta-Ga2O3; thermal conductivity; thermal diffusivity; 2; omega-method; anisotropy;
D O I
10.1088/0268-1242/31/12/125006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The monoclinic crystal structure of beta-Ga2O3 leads to significant anisotropy of the thermal properties. The 2 omega-method is used to measure the thermal diffusivity D in [010] and [001] direction respectively and to determine the thermal conductivity values lambda of the [100], [010] and [001] direction from the same insulating Mg-doped beta-Ga2O3 single crystal. We detect a temperature independent anisotropy factor of both the thermal diffusivity and conductivity values of D-[010]/D-[001] = lambda([010])/lambda([001]) = 1.4 +/- 0.1. The temperature dependence is in accord with phonon-phonon-Umklapp-scattering processes from 300 K down to 150 K. Below 150 K point-defect-scattering lowers the estimated phonon-phonon-Umklapp-scattering values.
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页数:6
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