Detailed arsenic concentration profiles at Si/SiO2 interfaces

被引：20

作者：

Pei, Lirong ^{[2
]}

Duscher, Gerd ^{[2
,3
]}

Steen, Christian ^{[1
]}

Pichler, Peter ^{[1
,4
]}

Ssel, Heiner R. ^{[1
,4
]}

Napolitani, Enrico ^{[5
,6
]}

De Salvador, Davide ^{[5
,6
]}

Piro, Alberto Maria ^{[7
,8
]}

Terrasi, A. Tonio ^{[7
,8
]}

Severac, Fabrice ^{[9
]}

Cristiano, Filadelfo ^{[9
]}

Ravichandran, Karthik ^{[10
]}

Gupta, Naveen ^{[10
]}

Windl, Wolfgang ^{[10
]}

机构：

[1] Univ Erlangen Nurnberg, Chair Elect Devices, D-91058 Erlangen, Germany

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA

[4] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

[5] Univ Padua, Dipartimento Fis, I-35141 Padua, Italy

[6] INFM, CNR, MATIS, I-35141 Padua, Italy

[7] INFM, CNR, MATIS, I-95127 Catania, Italy

[8] Univ Catania, Dipartimento Fis & Astron, I-95127 Catania, Italy

[9] Univ Toulouse, CNRS, LAAS, F-31077 Toulouse, France

[10] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2967713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be similar to 1 x 10(15) cm(-2) for an implanted dose of I X 1016 cm-2 with a maximum concentration of similar to 10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects. (C) 2008 American Institute of Physics.

引用

页数：11

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