Phonon sideband recombination kinetics in single quantum dots

被引：11

作者：

Abbarchi, M. ^{[1
,2
]}

Gurioli, M. ^{[1
,2
]}

Vinattieri, A. ^{[1
,2
]}

Sanguinetti, S. ^{[3
,4
]}

Bonfanti, M. ^{[3
,4
]}

Mano, T. ^{[5
]}

Watanabe, K. ^{[5
]}

Kuroda, T. ^{[5
]}

Koguchi, N. ^{[5
]}

机构：

[1] Univ Florence, LENS, I-50019 Sesto Fiorentino, Italy

[2] Univ Florence, Dipartimento Fis, I-50019 Sesto Fiorentino, Italy

[3] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy

[4] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[5] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 02期

关键词：

D O I：

10.1063/1.2948932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an experimental study on the recombination kinetics of single strain-free GaAs quantum dots (QDs) grown by modified droplet epitaxy. The different bands composing the single quantum dot emission line at high temperature show identical dynamics, proving the common origin of all contributions. Our results thus agree with the interpretation of the broad pedestal band appearing when increasing the temperature as originated from the phonon replica. Finally, the relative weight of the phonon replicas depends both on temperature and on the QD size, in agreement with the theoretical predictions. (C) 2008 American Institute of Physics.

引用

页数：4

共 31 条

[1] Recombination lifetime of single GAAs/AlGaAs quantum dots [J].

Abbarchi, M. ;

Gurioli, M. ;

Sanguinetti, S. ;

Zamfirescu, M. ;

Vinattieri, A. ;

Koguchi, N. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11) :3860-+

[2]

Alderighi D, 2001, PHYS STATUS SOLIDI A, V183, P129, DOI 10.1002/1521-396X(200101)183:1<129::AID-PSSA129>3.0.CO

[3]

2-T

[4] Acoustic phonon broadening mechanism in single quantum dot emission [J].

Besombes, L ;

Kheng, K ;

Marsal, L ;

Mariette, H .

PHYSICAL REVIEW B, 2001, 63 (15)

[5] Long lived coherence in self-assembled quantum dots [J].

Birkedal, D ;

Leosson, K ;

Hvam, JM .

PHYSICAL REVIEW LETTERS, 2001, 87 (22) :227401-227401

[6] Dephasing in InAs/GaAs quantum dots [J].

Borri, P ;

Langbein, W ;

Mork, J ;

Hvam, JM ;

Heinrichsdorff, F ;

Mao, MH ;

Bimberg, D .

PHYSICAL REVIEW B, 1999, 60 (11) :7784-7787

[7] Ultralong dephasing time in InGaAs quantum dots [J].

Borri, P ;

Langbein, W ;

Schneider, S ;

Woggon, U ;

Sellin, RL ;

Ouyang, D ;

Bimberg, D .

PHYSICAL REVIEW LETTERS, 2001, 87 (15) :157401-157401

[8] Presentation and experimental validation of a single-band, constant-potential model for self-assembled InAs/GaAs quantum dots [J].

Califano, M ;

Harrison, P .

PHYSICAL REVIEW B, 2000, 61 (16) :10959-10965

[9] Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots -: art. no. 233301 [J].

Favero, I ;

Cassabois, G ;

Ferreira, R ;

Darson, D ;

Voisin, C ;

Tignon, J ;

Delalande, C ;

Bastard, G ;

Roussignol, P ;

Gérard, JM .

PHYSICAL REVIEW B, 2003, 68 (23)

[10] Exciton-LO-phonon coupling in self-organized InAs/GaAs quantum dots [J].

Heitz, R ;

Schliwa, A ;

Bimberg, D .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 237 (01) :308-319

← 1 2 3 4 →