Fast Preparation and Low-Temperature Thermoelectric Properties of CoSb3

被引：18
作者：
Su, Taichao [1 ]
He, Chunyuan [1 ,2 ]
Li, Hongtao [3 ]
Guo, Xin [2 ]
Li, Shangsheng [1 ]
Ma, Hongan [2 ]
Jia, Xiaopeng [1 ,2 ]
机构：
[1] Henan Polytech Univ, Inst Mat Sci & Engn, Jiaozuo 454000, Peoples R China
[2] Jinlin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China
[3] Shanghai Entry Exit Inspect & Quarantine Bur, Shanghai 200135, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 01期
基金：
美国国家科学基金会;
关键词：
High pressure; transport properties; CoSb3; HIGH-PRESSURE; TRANSPORT;
D O I：
10.1007/s11664-012-2259-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polycrystalline p-type CoSb3 was synthesized by the high-pressure method. The microstructure and temperature-dependent thermoelectric properties of CoSb3 were investigated. X-ray diffraction and scanning electron microscopy showed that single-phase CoSb3 with fine grain size could be quickly synthesized under high pressure. The carrier concentrations of CoSb3 could be tuned by more than a factor of 10 by changing the pressure during synthesis. With the increase of the synthetic pressure, the Seebeck coefficient and resistivity of CoSb3 increase while the thermal conductivity decreases.
引用
收藏
页码：109 / 113
页数：5
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