Distortion of SIMS profiles due to ion beam mixing

被引：11

作者：

Saggio, M ^{[1
]}

Montandon, C ^{[1
]}

Bourenkov, A ^{[1
]}

Frey, L ^{[1
]}

Pichler, P ^{[1
]}

机构：

[1] Fraunhofer Inst Integrierte Schaltungen, Bereich Bauelementetechnol, D-91058 Erlangen, Germany

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1997年 / 141卷 / 1-4期

关键词：

SIMS analysis; silicon; low-energy implantation; shallow profiles;

D O I：

10.1080/10420159708211555

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Secondary ion mass spectroscopy (SIMS) is one of the most important tools in analyzing dopant profiles in silicon technology. During SIMS analysis, target atoms are sputtered by an ion beam so that, by mass separation, depth profiles of impurities are obtained. When analyzing shallow dopant distributions, the profile shape can be distorted significantly by ion-beam mixing induced by the sputtering process. In this work, the effects of ion-beam mixing on dopant profiles are analyzed experimentally and theoretically via delta-response functions, the SIMS signals of delta-doped layers. Methods for the reconstruction of true dopant profiles are discussed and applied to profiles of arsenic and antimony implanted at low energies.

引用

页码：37 / 52

页数：16

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