Enhancing the photocatalytic activity of GaN by electrochemical etching

被引：21

作者：

Cao, Dezhong ^{[1
]}

Xiao, Hongdi ^{[1
]}

Xu, Hangzhou ^{[2
]}

Cui, Jishi ^{[1
]}

Gao, Qingxue ^{[1
]}

Pei, Haiyan ^{[2
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

[2] Shandong Univ, Sch Environm Sci & Engn, Jinan 250100, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2015年 / 70卷

基金：

中国国家自然科学基金;

关键词：

Nanoporous GaN; Photocatalytic activity; Porous Si; Electrochemical etching; POROUS SILICON; DEGRADATION; FABRICATION;

D O I：

10.1016/j.materresbull.2015.06.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanoporous (NP) GaN thin films prepared with electrochemical etching method were investigated as photocatalysts in dye photodegradation systematically. The comparison of NP GaN thin films with GaN thin films showed that NP GaN thin films with high surface-to-volume ratio exhibited much better photocatalytic activity. In comparison with porous Si wafers, NP GaN thin films with lower surface area exhibited much better photocatalytic activity, because GaN is efficient not only for dye reduction like Si, but also for dye oxidation. Due to its ceramic-like chemical inertness, moreover, NP GaN showed more excellent stability to photodegrade organic dye than porous Si under basic conditions. The band gap of GaN can be modulated in visible-light region, which will be beneficial to a photodegradation system with concentrated solar light. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：881 / 886

页数：6

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