Organic memristive element with Chitosan as solid polyelectrolyte

被引：8

作者：

Cifarelli, Angelica ^{[1
]}

Parisini, Antonella ^{[1
]}

Berzina, Tatiana ^{[2
]}

Iannotta, Salvatore ^{[2
]}

机构：

[1] Univ Parma, Dept Math Phys & Comp Sci, Viale GP Usberti 7A, I-43124 Parma, Italy

[2] CNR IMEM, Parco Area Sci 37A, I-43124 Parma, Italy

来源：

MICROELECTRONIC ENGINEERING | 2018年 / 193卷

关键词：

Organic memristor devices; Chitosan gel; Polyelectrolyte; Biocompatible materials; Solid state electrochemistry; RESISTIVE SWITCHING MEMORY; POLYANILINE; DEVICE; OXIDATION; SYNAPSE;

D O I：

10.1016/j.mee.2018.02.024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The biomimetic devices such as the artificial synapses are of great significance because they can emulate the functions of biological systems. The development of memristive devices represents one of the most promising pathways towards adaptive and neuromorphic computing. This study reports the characterization of the first organic memristive element based on polyaniline-Chitosan (PANI-CS) junction. The Chitosan is used as solid polyelectrolyte in the active area of organic memristive element. Its working principle is based on the significant variation of the resistance of PANI in the oxidized and reduced states in junction area. The experimental parameters that influence the memristive behavior of Chitosan-based devices were studied by means of voltage-current measurements. The application of biocompatible material, the Chitosan, in organic memristive devices pave the way towards the application of organic memristor in bio-integrated systems. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：65 / 70

页数：6

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