Interfacial oxygen migration and its effect on the magnetic anisotropy in Pt/Co/MgO/Pt films

被引：58

作者：

Chen, Xi ^{[1
]}

Feng, Chun ^{[1
]}

Wu, Zheng Long ^{[2
]}

Yang, Feng ^{[3
]}

Liu, Yang ^{[1
]}

Jiang, Shaolong ^{[1
]}

Li, Ming Hua ^{[1
]}

Yu, Guang Hua ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China

[2] Beijing Normal Univ, Analyt & Testing Ctr, Beijing 100875, Peoples R China

[3] China Univ Petr, State Key Lab Heavy Oil Proc, Beijing 102249, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期

关键词：

VACANCY FORMATION; TUNNEL-JUNCTIONS;

D O I：

10.1063/1.4864184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports the interfacial oxygen migration effect and its induced magnetic anisotropy evolution in Pt/Co/MgO/Pt films. During depositing the MgO layer, oxygen atoms from the MgO combine with the neighboring Co atoms, leading to the formation of CoO at the Co/MgO interface. Meanwhile, the films show in-plane magnetic anisotropy (IMA). After annealing, most of the oxygen atoms in CoO migrate back to the MgO layer, resulting in obvious improvement of Co/MgO interface and the enhancement of effective Co-O orbital hybridization. These favor the evolution of magnetic anisotropy from IMA to perpendicular magnetic anisotropy (PMA). The oxygen migration effect is achieved by the redox reaction at the Co/MgO interface. On the contrary, the transfer from IMA to PMA cannot be observed in Pt/Co/Pt films due to the lack of interfacial oxygen migration. (C) 2014 AIP Publishing LLC.

引用

页数：4

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