Direct measurement of surface stress during Bi-mediated Ge growth on Si

被引：1

作者：

Asaoka, Hidehito ^{[1
]}

Yamazaki, Tatsuya ^{[1
]}

Yamaguchi, Kenji ^{[1
]}

Shamoto, Shin-ichi ^{[1
]}

Filimonov, Sergey ^{[2
]}

Suemitsu, Maki ^{[3
]}

机构：

[1] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Tokai, Ibaraki 3191195, Japan

[2] Tomsk State Univ, Dept Phys, Tomsk 634050, Russia

[3] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

SURFACE SCIENCE | 2013年 / 609卷

关键词：

Stresses; Surface structure; Molecular beam epitaxy; Surfactant-mediated epitaxy; SI(111); EPITAXY; FILMS;

D O I：

10.1016/j.susc.2012.12.002

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have focused on stress measurements during Bi termination of Si (111) and Ge growth on this Bi-mediated Si (111). In order to obtain information on both the surface stress and the surface structure simultaneously, we have combined the surface-curvature and the reflection-high-electron-energy-diffraction instrumentations in an identical ultrahigh vacuum system. We find the Bi-terminated Si (111) root 3x root 3-beta surface releases 1.8 N/m (=J/m(2)), or (1.4 eV/(1x1 unit cell)), of the surface energy from the strong tensile Si (111) 7x7 reconstruction. Subsequent Ge deposition on the Bi-terminated Si surface develops a compressive stress, which oscillates with a period corresponding to the growth of a single bilayer. The real-time stress measurement provides a direct evidence for this oscillatory stress relaxation in the layer-by-layer growth. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：157 / 160

页数：4

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