Microstructure properties of Ba0.5Sr0.5TiO3 thin films on Si with conductive SrRuO3 bottom electrodes

被引：20
|
作者：
Jia, QX
Kung, HH
Wu, XD
机构：
[1] Mat. Science and Technology Division, Mail Stop G755, Los Alamos National Laboratory, Los Alamos
[2] Symyx, Sunnyvale, CA 94086
来源：
THIN SOLID FILMS | 1997年 / 299卷 / 1-2期
关键词：
capacitors; dielectrics; laser ablation; structural properties;
D O I：
10.1016/S0040-6090(96)09448-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Quaternary Ba0.5Sr0.5TiO3 (BSTO) thin films were deposited on (100) Si by pulsed laser deposition with conductive SrRuO3 (SRO) bottom electrodes. The growth of highly (001)-oriented SRO film on (100) Si was accomplished by using a bilayer buffer CeO2 and yttria-stabilized zirconia (YSZ). The BSTO films deposited on SRO on Si using such a buffer system were well aligned in the plane with respect to the major axes of the substrate confirmed by X-ray diffraction. The crystalline nature of the BSTO films on Si was further illustrated by Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The BSTO thin films exhibited a dielectric constant above 340 at 10 kHz tested from a capacitor configuration of Au/BSTO/SRO. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：115 / 118
页数：4
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