Atomic vapor deposition of bismuth titanate thin films

被引：16

作者：

Deepak, Nitin ^{[1
]}

Zhang, Panfeng F. ^{[1
]}

Keeney, Lynette ^{[1
]}

Pemble, Martyn E. ^{[1
]}

Whatmore, Roger W. ^{[1
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 18期

基金：

爱尔兰科学基金会;

关键词：

BI4TI3O12;

D O I：

10.1063/1.4801985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

c-axis oriented ferroelectric bismuth titanate (Bi4Ti3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by an atomic vapor deposition technique. The ferroelectric properties of the thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data and transmission electron microscopy analysis demonstrated the presence of out-of-phase boundaries (OPBs). It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films. Piezo-responses of the thin films were measured by piezo-force microscopy. It is found that the in-plane piezoresponse is stronger than the out-of-plane response, due to the strong c-axis orientation of the films. (C) 2013 AIP Publishing LLC

引用

页数：7

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