Tribenzyltin(IV) chloride Thiosemicarbazones: Novel Single Source Precursors for Growth of SnS Thin Films

被引：55

作者：

Bade, Balasaheb P. ^{[1
]}

Garje, Shivram S. ^{[1
]}

Niwate, Yogesh S. ^{[1
]}

Afzaal, Mohammad ^{[2
,3
]}

O'Brien, Paul ^{[2
,3
]}

机构：

[1] Univ Bombay, Dept Chem, Bombay 400098, Maharashtra, India

[2] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England

[3] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England

来源：

CHEMICAL VAPOR DEPOSITION | 2008年 / 14卷 / 9-10期

基金：

英国工程与自然科学研究理事会;

关键词：

Single-source precursors; Thin films; Tin sulfide; Tin thiosemicarbazones;

D O I：

10.1002/cvde.200806687

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Tin sulfide (SnS) thin films are deposited using simple tin thiosemicarbazone complexes of the type Bz(3)SnCl(L) (L = thiosemicarbazones of salicylaldehye and 4-chlorobenzaldehyde). Thin films are deposited using aerosol-assisted (AA) CVD in the range 375-475 degrees C. X-ray diffraction (XRD) shows the formation of SnS regardless of growth temperature and precursor type. Scanning electron microscope (SEM) images show that the films have wafer-like morphology, and the growth temperatures do not have a profound effect on morphology.

引用

页码：292 / 295

页数：4

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