Ultrafast Semiconductor Disk Lasers

被引：0

作者：

Waldburger, D. ^{[1
]}

Link, S. M. ^{[1
]}

Alfieri, C. G. E. ^{[1
]}

Gini, E. ^{[2
]}

Golling, M. ^{[1
]}

Keller, U. ^{[1
]}

机构：

[1] ETH, Dept Phys, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland

[2] ETH, FIRST Ctr Micro & Nanosci, CH-8093 Zurich, Switzerland

来源：

2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年

关键词：

OUTPUT POWER; MODE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of ultrafast semiconductor disk lasers rapidly advanced over the last decades. The strong interest from industry for inexpensive, compact and reliable ultrafast laser sources in the picosecond and femtosecond domain has driven this technology towards commercial products. Frequency metrology and biomedical applications greatly benefit from sub200 femtosecond pulse durations with peak powers in the kilowatt range. The aim of this review is to briefly describe the application potential and to give an overview of the current status of modelocked semiconductor disk lasers. Particular focus is placed on the ongoing efforts to achieve shorter pulses with higher peak powers.

引用

页数：2

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