Competition for adsorption sites between atomic Be and Si on W(100)

被引：2

作者：

Rut'kov, E. V. ^{[1
]}

Afanas'eva, E. Y. ^{[1
]}

Gall, N. R. ^{[1
]}

机构：

[1] Ioffe Inst, Politech Skaya 26, St Petersburg 194021, Russia

来源：

SURFACE SCIENCE | 2022年 / 725卷

关键词：

Beryllium; Silicon; Surface compounds; Tungsten; Coadsorption; TUNGSTEN; SILICON; SURFACE; BERYLLIUM; SULFUR; COADSORPTION; CARBON;

D O I：

10.1016/j.susc.2022.122161

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It has been shown that Be deposition onto W(100) at 1100-1200 K results in displacement of earlier deposited Si atoms from the surface into the bulk, and the displacement is performed in "atom-to atom" mode, so that the total concentration of both adsorbates stays constant. Dissolution of Be atoms into the substrate at 1400 K leads to Si coming out from the bulk to surface. We attribute this to the fact that Be is adsorbed similarly to p-block atoms that form surface compounds on the (100) face of bcc metals.

引用

页数：5

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