Spin relaxation rates in quantum dots: Role of the phonon modulated spin-orbit interaction

被引：4

作者：

Alcalde, A. M. ^{[2
]}

Romano, C. L. ^{[1
]}

Marques, G. E. ^{[3
]}

机构：

[1] Univ Buenos Aires, Dept Phys JJ Giambiagi, Buenos Aires, DF, Argentina

[2] Univ Fed Uberlandia, Inst Fis, BR-38400902 Uberlandia, MG, Brazil

[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 148卷 / 5-6期

关键词：

Nanostructures; Semiconductors; Electron-phonon interactions;

D O I：

10.1016/j.ssc.2008.08.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate the spin relaxation rates in InAs and GaAs parabolic quantum dots due to the interaction of spin carriers with acoustical phonons. We consider a spin relaxation mechanism completely intrinsic to the system, since it is based on the modulation of the spin-orbit interaction by the acoustic phonon potential, which is independent of any structural properties of the confinement potential. The electron-phonon deformation potential and the piezoelectric interaction are described by the Pavlov-Firsov spin-phonon Hamiltonian. Our results demonstrate that, for narrow-gap semiconductors, the deformation potential interaction becomes dominant. This behavior is not observed for wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the relaxation processes. We also demonstrate that the spin relaxation rates are particularly sensitive to values of the Lande g-factor, which depend strongly on the spatial shape of the confinement. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：255 / 258

页数：4

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