Electrical Characteristics of Ti/Al Contacts on AlInN:Mg/GaN Heterostructures

被引：1

作者：

Kim, Seongjun ^{[1
]}

Kim, Hee Jin ^{[2
,3
]}

Choi, Suk ^{[2
,3
]}

Lochner, Zachary ^{[2
,3
]}

Ryou, Jae-Hyun ^{[2
,3
,4
,5
]}

Dupuis, Russell D. ^{[2
,3
]}

Ahn, Kwang-Soon ^{[6
]}

Kim, Hyunsoo ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, Chonbuk, South Korea

[2] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[4] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA

[5] Univ Houston, Texas Ctr Superconduct Univ Houston TcSUH, Houston, TX 77204 USA

[6] Yeungnam Univ, Sch Chem Engn, Kyongsan 712749, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

TI/AL/MO/AU OHMIC CONTACTS; TRANSPORT-PROPERTIES; CARRIER TRANSPORT; ALGAN/GAN; TEMPERATURE; FIELD; INAIN/GAN; GROWTH; HEMTS;

D O I：

10.7567/JJAP.52.10MA07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of a Ti/Al metal contact on Mg-doped AlInN/GaN heterostructures were investigated using a transmission line model. The as-deposited Ti/Al contact exhibited near Ohmic contact with a specific contact resistance of 1.78 x 10(-2) Omega cm(2), while the thermal annealing performed at 600 degrees C led to better Ohmic contact with a contact resistance of 9.38 x 10(-4) Omega cm(2). This could be attributed to the formation of a direct Ohmic path connecting the contact and the two-dimensional electron gas beneath an AlInN:Mg barrier upon thermal annealing, namely, a spike contact through the indiffusion of Al as verified from secondary ion mass spectroscopy. Current-voltage-temperature measurements showed an insignificant temperature dependence in both the sheet resistance and the contact resistance, which seemed to be associated with the distinctive feature of the spike contact. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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