TEM study of InAs self-assembled quantum dots in GaAs

被引：0

作者：

Müller, E ^{[1
]}

Ribeiro, E ^{[1
]}

Heinzel, T ^{[1
]}

Ensslin, K ^{[1
]}

Medeiros-Ribeiro, G ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] Paul Scherrer Inst, Lab Mikro & Nanostrukturen, CH-5232 Villigen, Switzerland

来源：

THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES | 1999年 / 79卷

关键词：

InAs/GaAs; self-assembled quantum dots; transmission electron microscopy; electrical transport;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

InAs self-assembled quantum dots grown on GaAs(001) substrate were investigated by TEM as well as by electrical transport measurements. The TEM analysis revealed the presence of a complicated triple-layer structure instead of simple dots for high In-concentrations. The electrical measurement suggest that the dots act as controllable scattering centers. A saturation of the mobility is observed for the highest dot density samples. (C) 1998 Elsevier Science S.A. All rights reserved.

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页码：38 / 41

页数：4

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