Nanoscale n-channel and ambipolar organic field-effect transistors

被引：43

作者：

Jung, TH

Yoo, B

Wang, L

Dodabalapur, A

Jones, BA

Facchetti, A

Wasielewski, MR

Marks, TJ

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

[2] Northwestern Univ, Ctr Nanofabricat & Mol Self Assembly, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 18期

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.2200591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N,N-'-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN(2)) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3x10(-3) cm(2)/V s at 5x10(5) V/cm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8CN(2) and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2x10(-3) and 4.0x10(-3) cm(2)/V s, respectively, are obtained at 5x10(5) V/cm. These results represent the shortest channel length n-channel and ambipolar organic transistors that have been fabricated. (c) 2006 American Institute of Physics.

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页数：3

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