Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography

被引：18
|
作者：
Gan, Zhaofeng [1 ]
Perea, Daniel E. [2 ]
Yoo, Jinkyoung [3 ]
Picraux, S. Tom [3 ]
Smith, David J. [1 ]
McCartney, Martha R. [1 ]
机构：
[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
[2] Pacific NW Natl Lab, Environm Mol Sci Lab, Richland, WA 99352 USA
[3] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期
关键词：
DOPED SILICON NANOWIRES; GROWTH; ABRUPTNESS; RESOLUTION; ATOMS;
D O I：
10.1063/1.4824775
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0 +/- 0.3V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 10(19) cm(-3) for donors and 10(17) cm(-3) for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures. (C) 2013 AIP Publishing LLC.
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页数：5
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