Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper

被引：93

作者：

Yamanouchi, Michihiko ^{[1
,2
]}

Chen, Lin ^{[1
,2
]}

Kim, Junyeon ^{[3
]}

Hayashi, Masamitsu ^{[3
]}

Sato, Hideo ^{[1
]}

Fukami, Shunsuke ^{[1
]}

Ikeda, Shoji ^{[1
,2
]}

Matsukura, Fumihiro ^{[1
,2
,4
]}

Ohno, Hideo ^{[1
,2
,4
]}

机构：

[1] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[4] Tohoku Univ, WPI Adv Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 21期

关键词：

DOMAIN-WALL;

D O I：

10.1063/1.4808033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show a three terminal magnetic tunnel junction (MTJ) with a 10-nm thick channel based on an interconnection material Cu with 10% Ir doping. By applying a current density of less than 10(12) A m(-2) to the channel, depending on the current direction, switching of a MTJ defined on the channel takes place. We show that spin transfer torque (STT) plays a critical role in determining the threshold current. By assuming the spin Hall effect in the channel being the source of the STT, the lower bound of magnitude of the spin Hall angle is evaluated to be 0.03. (C) 2013 AIP Publishing LLC.

引用

页数：4

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