Modeled Specific Contact Resistivity with High Doping Effects: Requirements for 1 nΩ-cm2 Contacts

被引：0

作者：

Ahmed, Khaled ^{[1
]}

机构：

[1] Intermolecular Inc, San Jose, CA 95134 USA

来源：

2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new compact model is given for the specific contact resistivity (rho(C)) on n(+)-Si. The significance of the model lies in the consideration of two high doping effects at the same time: (1) image force barrier lowering, (2) band-edge tailing and impurity-band barrier enhancement. The model is used for estimating the requirements on contacts with rho(C) < 10 n Omega-cm(2). It is shown that 1 n Omega-cm(2) contacts may be achieved on n+-Si with doping density N-D <= 3 x 10(20) cm(-3) for intrinsic Schottky barrier height phi(B0) <= 0.38 eV. This estimate is more optimistic than previously predicted by models that ignored high-doping effects. The model is in excellent agreement with experimental data obtained on NiPtSi/n(+)-Si and NiSi/n(+)-Si contacts with N-D approximate to 1.5 - 2 x 10(20) cm(-3).

引用

页数：2

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