Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3

被引：73

作者：

Yang, Chao ^{[1
,2
]}

Liang, Hongwei ^{[2
]}

Zhang, Zhenzhong ^{[3
]}

Xia, Xiaochuan ^{[2
]}

Tao, Pengcheng ^{[1
]}

Chen, Yuanpeng ^{[1
,2
]}

Zhang, HeQiu ^{[2
]}

Shen, Rensheng ^{[2
]}

Luo, Yingmin ^{[2
]}

Du, Guotong ^{[2
]}

机构：

[1] Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China

[3] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China

来源：

RSC ADVANCES | 2018年 / 8卷 / 12期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

SEMICONDUCTOR ULTRAVIOLET PHOTODETECTORS; HETEROJUNCTION; FILM; WAVELENGTH; DETECTORS; NANOWIRES;

D O I：

10.1039/c8ra00523k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal beta-Ga2O3. Cu and Ti/Au were deposited on the top and bottom surface of Ga2O3 as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 x 10(7) at +/- 2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.

引用

页码：6341 / 6345

页数：5

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