Fluorine incorporation during Si solid phase epitaxy

被引：2

作者：

Impellizzeri, G

Mirabella, S

Romano, L

Napolitani, E

Carnera, A

Grimaldi, MG

Priolo, F

机构：

[1] Univ Catania, MATIS, INFM, I-95123 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] Univ Padua, MATIS, INFM, I-35131 Padua, Italy

[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期

关键词：

segregation; out-diffusion; implantation damage; impurities;

D O I：

10.1016/j.nimb.2005.08.146

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have investigated the F incorporation and segregation in preamorphized Si during solid phase epitaxy (SPE) at different temperatures and for several implanted-F energies and fluences. The Si samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enriched with F at different energies (65-150 keV) and fluences (0.07-5 x 10(14) F/cm(2)). Subsequently, the samples were regrown by SPE at different temperatures: 580, 700 and 800 degrees C. We have found that the amount of F incorporated after SPE strongly depends on the SPE temperature and on the energy and fluence of the implanted-F, opening the possibility to tailor the F profile during SPE. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：614 / 616

页数：3