Molecular dynamics simulation and electrical conductivity measurement of Na2O•3SiO2 melt under high pressure; relationship between its structure and properties

被引:31
作者
Noritake, Fumiya [1 ]
Kawamura, Katsuyuki [1 ]
Yoshino, Takashi [2 ]
Takahashi, Eiichi [3 ]
机构
[1] Okayama Univ, Grad Sch Environm & Life Sci, Kita Ku, Okayama 7008530, Japan
[2] Okayama Univ, Inst Sci Earths Interior, Tottori 6820193, Japan
[3] Tokyo Inst Technol, Dept Earth & Pranetary Sci, Meguro Ku, Tokyo 1528551, Japan
关键词
Silicate melt; Pressure dependence; Molecular dynamics; Electrical conductivity; X-RAY-DIFFRACTION; SILICON COORDINATION; CRYSTAL-STRUCTURE; TEMPERATURE; RAMAN; LIQUID; GPA;
D O I
10.1016/j.jnoncrysol.2012.08.027
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The relationship between structure and properties of the Na2O center dot 3SiO(2) melt was investigated using molecular dynamics (MD) simulations and electrical conductivity measurements under high pressure. The inter-atomic potential was newly developed using energy surfaces derived by quantum chemical calculations. In MD simulations, changes of the structure and properties were observed as a function of pressure. An increase in self-diffusion coefficients of network forming atoms is closely related to the distortion of the -Si-O- network and the changes in distributions of poly-membered rings which forms the -Si-O- network. In the electrical conductivity measurements, we found a negative pressure dependence at least up to 3 GPa. This suggests that electric conductivity in Na2O center dot 3SiO(2) melt is controlled by ionic conduction of sodium atoms. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:3109 / 3118
页数:10
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