A simple method for calculating strain distributions in quantum dot structures

被引:92
作者
Downes, JR
Faux, DA
OReilly, EP
机构
[1] Department of Physics, University of Surrey
关键词
D O I
10.1063/1.365210
中图分类号
O59 [应用物理学];
学科分类号
摘要
A simple method is presented for calculating the stress and strain distributions arising from an initially uniformly strained quantum dot of arbitrary shape buried in an infinite isotropic medium. The method involves the evaluation of a surface integral over the boundary of the quantum dot and is therefore considerably more straightforward to implement than alternative stress evaluation techniques. The technique is ideally suited to calculating strain distributions within disordered arrays of pyramidal quantum dots prepared by Stranski-Krastanow growth. The strain distribution for a cuboidal quantum dot is presented and compared to that of a rectangular quantum wire. (C) 1997 American Institute of Physics.
引用
收藏
页码:6700 / 6702
页数:3
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共 18 条
  • [1] QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS
    ARAKAWA, Y
    YARIV, A
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1887 - 1899
  • [2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS
    ASADA, M
    MIYAMOTO, Y
    SUEMATSU, Y
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1915 - 1921
  • [3] InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties
    Bimberg, D
    Ledentsov, NN
    Grundmann, M
    Kirstaedter, N
    Schmidt, OG
    Mao, MH
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Kopev, PS
    Alferov, ZI
    Ruvimov, SS
    Gosele, U
    Heydenreich, J
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1311 - 1319
  • [4] ELECTRONIC STATES AND OPTICAL-TRANSITIONS IN LOW-DIMENSIONAL SEMICONDUCTORS
    CINGOLANI, R
    RINALDI, R
    [J]. RIVISTA DEL NUOVO CIMENTO, 1993, 16 (09): : 1 - 85
  • [5] Influence of strain relaxation on the electronic properties of buried quantum wells and wires
    Downes, JR
    Faux, DA
    OReilly, EP
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 357 - 363
  • [6] THE DETERMINATION OF THE ELASTIC FIELD OF AN ELLIPSOIDAL INCLUSION, AND RELATED PROBLEMS
    ESHELBY, JD
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1226): : 376 - 396
  • [7] FAUX DA, 1996, J APPL PHYS, V80, P2517
  • [8] COHERENT STRESS-RELAXATION IN A HALF-SPACE - MODULATED LAYERS, INCLUSIONS, STEPS, AND A GENERAL-SOLUTION
    GLAS, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3556 - 3571
  • [9] GOSLING TJ, 1995, J APPL PHYS, V77, P5061
  • [10] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE
    GRUNDMANN, M
    STIER, O
    BIMBERG, D
    [J]. PHYSICAL REVIEW B, 1995, 52 (16) : 11969 - 11981