Bimolecular recombination in molecularly doped polymers

被引:10
作者
Tyutnev, Andrey [1 ]
Saenko, Vladimir [1 ]
Pozhidaev, Evgenii [1 ]
机构
[1] Natl Res Univ, Higher Sch Econ, Moscow 101000, Russia
关键词
Multiple trapping model; Uniform carrier generation; Electron-gun technique; Langevin-type recombination; RADIATION-INDUCED CONDUCTIVITY; CHARGE-CARRIER TRANSPORT; DISORDER; MODEL;
D O I
10.1016/j.chemphys.2013.01.007
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated the bimolecular recombination of holes and electrons in a typical hole-conducting molecularly doped polymer (DEH-doped polycarbonate). The method used is a variant of the time-of-flight technique with the bulk generation of charge carriers. A small signal regime has been used to extract parameters of the multiple trapping model with an exponential as well as the Gaussian trap distributions. Then, using a large signal regime with the generation rate increasing sequentially in a power of 10, we compared model predictions with experiment. It was found that the best agreement is achieved once the Langevin recombination coefficient is used, this being defined by the microscopic mobility featuring in the models. The relevance of this fact to the published data has been addressed as well. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:133 / 139
页数:7
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