Study on Gallium Nitride-Based Metal-Oxide-Semiconductor Capacitors With RF Magnetron Sputtered Y2O3 Gate

被引：23

作者：

Quah, Hock Jin ^{[1
]}

Cheong, Kuan Yew ^{[1
]}

机构：

[1] Univ Sains Malaysia, Energy Efficient & Sustainable Semicond Res Grp, Sch Mat & Mineral Resources Engn, George Town 14300, Malaysia

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 11期

关键词：

Gallium nitride (GaN); interfacial layer (IL); postdeposition annealing (PDA); yttrium oxide; PHASE DEPOSITED SIO2; ELECTRICAL-PROPERTIES; THIN-FILMS; N-GAN; INSULATOR; DIELECTRICS; OXIDATION; DEVICES; HFO2; PASSIVATION;

D O I：

10.1109/TED.2012.2212903

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of postdeposition annealing (PDA) temperatures (200 degrees C-1000 degrees C) in argon ambient on radio-frequency magnetron sputtered Y2O3 film on n-type GaN substrate were studied. As-deposited Y2O3 film was amorphous as no Y2O3 phase was detected by X-ray diffraction. A transformation of the amorphous to polycrystalline phase happened when PDA (>= 200 degrees C) was carried out. The detection of beta-Ga2O3 phase for samples annealed beyond 400 degrees C denoted the formation of interfacial layer (IL) consisting of an Y2O3 and beta-Ga2O3 mixture. The formation of IL was revealed by cross-sectional energy-filtered transmission electron microscopy images. Metal-oxide-semiconductor characteristics of Y2O3/GaN structure annealed at different temperatures were correlated with structural and surface morphology analysis. The 400-degrees C-annealed sample demonstrated the highest electric breakdown field (similar to 10.7 MV/cm) due to the attainment of the lowest effective oxide charge, semiconductor-oxide interface-trap density, and total interface-trap density.

引用

页码：3009 / 3016

页数：8

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