Magnetic tunnel junctions using B2-ordered Co2MnAl Heusler alloy epitaxial electrode

被引：82

作者：

Sakuraba, Y ^{[1
]}

Nakata, J

Oogane, M

Ando, Y

Kato, H

Sakuma, A

Miyazaki, T

Kubota, H

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Aoba Ku, Aobayama 6-6-05, Sendai, Miyagi 980, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 02期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2162867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunnel junctions were fabricated with epitaxially grown Co2MnAl bottom electrodes combined with an Al-O tunnel barrier using a magnetron sputtering system. The epitaxial Co2MnAl electrode had very low surface roughness of 0.2 nm and a highly ordered B2 structure. Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial-Co2MnAl/Al-O/CoFe/IrMn exhibited large tunnel magnetoresistance (TMR) ratios of 65% at room temperature and 83% at 10 K. The TMR ratios were larger than those of a MTJ with a Co2MnAl polycrystalline electrode.

引用

页码：1 / 3

页数：3

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