Prospects of uncooled HgCdTe detector technology

被引:36
作者
Tennant, WE [1 ]
Cabelli, S [1 ]
Spariosu, K [1 ]
机构
[1] Rockwell Int Corp, Ctr Sci, LLC, Thousand Oaks, CA 91360 USA
关键词
HgCdTe; infrared (IR) detectors; uncooled detectors;
D O I
10.1007/s11664-999-0039-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Over the last several years cooled applications of HgCdTe at low temperatures have proliferated. Having low fundamental dark current at any given wavelength and temperature makes HgCdTe attractive for high temperature applications as well. We are exploring detectors with cut off wavelengths from the near to middle infrared region (similar to 1.5 to similar to 4 mu m). Theory allows applications from low light level imaging in starlight and "nightglow" to thermal imaging, both with useful sensitivities at room temperature. The demonstrated possibility of reducing or eliminating traditional recombination processes (radiative and Auger) further increase the attractiveness of HgCdTe. Current materials technology shows some evidence that these sensitivities can be attained. Current detector technology, being limited by SRH traps, appears to require modest cooling (to about 250K). Improved materials and processes should eliminate the need for even this cooling.
引用
收藏
页码:582 / 588
页数:7
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