Reflection high-energy electron diffraction intensity oscillation during layer-by-layer oxidation of Si(001) surfaces

被引：18

作者：

Watanabe, H

Baba, T

Ichikawa, M

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Ibaraki, Osaka 3058501, Japan

[2] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Ibaraki, Osaka 3050046, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied initial layer-by-layer oxidation of Si(001)-2X1 surfaces by using reflection high-energy electron diffraction (RHEED). We observed an intensity oscillation and a change in the streaky profile of a specular reflection spot in RHEED patterns during initial oxidation. These results indicate that layer-by-layer oxidation of Si surfaces is promoted by nucleation and lateral growth of two-dimensional oxide islands. We have also confirmed that a 1-monolayer-thick oxide has an ordered structure originating from the initial 2X1 reconstruction. (C) 1999 American Institute of Physics. [S0003-6951(99)00922-5].

引用

页码：3284 / 3286

页数：3

共 18 条

[1] ATOM-RESOLVED SURFACE-CHEMISTRY - THE EARLY STEPS OF SI(111)-7X7 OXIDATION [J].