Continuous-wave Nd:GdVO4/LBO laser at 541.5 nm under diode pumping into the emitting level

被引：2
作者：
Li, Y. L. [1 ]
Zhang, Y. H. [2 ]
Zhang, Y. C. [1 ]
机构：
[1] Changchun Univ Sci & Technol, Sch Elect & Informat Engn, Changchun 130022, Peoples R China
[2] Changchun UP Optotech Co Ltd, Changchun 130031, Peoples R China
来源：
LASER PHYSICS | 2012年 / 22卷 / 05期
关键词：
1.34; MU-M; V3+YAG SATURABLE ABSORBER; LOCKED NDGDVO4 LASER; ND-GDVO4; LASER; RED LASER; PULSE DURATION; BLUE LASER; EFFICIENT; OPERATION; POWER;
D O I：
10.1134/S1054660X12050192
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1083 nm Nd:GdVO4 laser under 880 nm diode pumping into the emitting level (4) (3/2). A LiB3O5 (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the green output power was better than 3.6% in the given 30 min.
引用
收藏
页码：845 / 847
页数：3
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