Fractional-N PLL synthesizer with 15 μsec start-up time by on-chip nonvolatile memory

被引:2
作者
Lee, Jun Gyu [1 ]
Masui, Shoichi [1 ]
机构
[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源
IEICE ELECTRONICS EXPRESS | 2012年 / 9卷 / 04期
关键词
phase locked loop; start-up time; nonvolatile memory; CMOS;
D O I
10.1587/elex.9.263
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a fractional-N PLL synthesizer with 15 mu sec start-up time featuring an open-loop VCO capacitor coarse setting and subsequent VCO control voltage setting technique with a nonvolatile memory, which can eliminate the frequency detection and VCO coarse tuning sequence used in conventional start-up acceleration techniques. The on-chip nonvolatile memory fabricated in a standard CMOS technology stores the predetermined calibration data to overcome the process variations in VCO capacitors and varactors. A prototype PLL is designed in a standard 0.18 mu m CMOS technology with die size of 950 mu m x 515 mu m and 10.4% area overhead of the acceleration circuits, and presents the measured start-up time of 14.6 mu sec.
引用
收藏
页码:263 / 269
页数:7
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