Design of a Concurrent Dual-Band 1.8-2.4-GHz GaN-HEMT Doherty Power Amplifier

被引:118
|
作者
Saad, Paul [1 ]
Colantonio, Paolo [2 ]
Piazzon, Luca [2 ]
Giannini, Franco [2 ]
Andersson, Kristoffer [1 ]
Fager, Christian [1 ]
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
[2] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
关键词
Doherty power amplifier (DPA); dual-band amplifier; dual-band matching networks; GaN-HEMT; high efficiency; power amplifier (PA);
D O I
10.1109/TMTT.2012.2189120
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the design, implementation, and experimental results of a high-efficiency dual-band GaN-HEMT Doherty power amplifier (DPA) are presented. An extensive discussion about the design of the passive structures is presented showing different possible topologies of the dual-band DPA. One of the proposed topologies is used to design a dual-band DPA in hybrid technology for the frequency bands 1.8 and 2.4 GHz with the second efficiency peak at 6-dB output power back-off (OBO). For a continuous-wave output power of 20 W, the measured power-added efficiency (PAE) is 64% and 54% at 1.8 and 2.4 GHz, respectively. At -dB OBO, the resulting measured PAEs were 60% and 44% in the two frequency bands. Linearized concurrent modulated measurement using 10-MHz LTE signal with 7-dB peak-to-average-ratio (PAR) at 1.8 GHz and 10-MHz WiMAX signal with 8.5-dB PAR at 2.4 GHz shows an average PAE of 34%, at an adjacent channel leakage ratio of -48 dBc and -46 dBc at 1.8 and 2.4 GHz, respectively.
引用
收藏
页码:1840 / 1849
页数:10
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