Formation of high-density silicon dots on a silicon-on-insulator substrate

被引：17

作者：

Tabe, M ^{[1
]}

Kumezawa, M ^{[1
]}

Yamamoto, T ^{[1
]}

Makita, S ^{[1
]}

Yamaguchi, T ^{[1
]}

Ishikawa, Y ^{[1
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

silicon; X-ray photoelectron spectroscopy; atomic force microscopy; silicon nitride; silicon dot;

D O I：

10.1016/S0169-4332(98)00703-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-density and nanometer-scale Si dots were fabricated on a silicon-on-insulator substrate by a non-lithography process, consisting of SiN island nucleation and subsequent Si etching-mode oxidation in a vacuum. It was found from X-ray photoelectron spectroscopy and atomic force microscopy that, during oxidation, the SiN islands serve as oxidation masks, and only bare Si regions are etched by oxygen, resulting in formation of Si dots. The lateral size and the height of Si dot are primarily determined by the SST masks and thickness of the top Si layer, respectively. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：553 / 557

页数：5

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