Dislocation analysis of germanium wafers under 1080 nm laser ablation

被引：10

作者：

Sha, YinChuan ^{[1
,2
]}

Jia, ZhiChao ^{[3
]}

Li, Zewen ^{[1
,2
]}

Pan, YunXiang ^{[1
]}

Nan, Pengyu ^{[1
,2
]}

Ni, XiaoWu ^{[1
,2
]}

机构：

[1] Nanjing Univ Sci & Technol, Sch Sci, Nanjing 210094, Peoples R China

[2] Nanjing Univ Sci & Technol, Adv Launching Coinnovat Ctr, Nanjing 210094, Peoples R China

[3] Jinling Inst Technol, Sch Mat Engn, Nanjing 211169, Peoples R China

来源：

APPLIED OPTICS | 2020年 / 59卷 / 23期

基金：

中国国家自然科学基金;

关键词：

SILICON; MODEL; MULTIPLICATION; ACCOUNT; ANODES; GROWTH;

D O I：

10.1364/AO.387936

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

COMSOL Multiphysics was employed to establish a dislocation model based on the Alexander and Haasen (AH) model, the heat conduction equation, and Hooke's law for calculating the dislocation distribution of germanium (Ge) under laser irradiation. The numerical simulation results were obtained. A continuous 1080 nm laser was utilized to ablate the monocrystalline Ge wafers to validate the model. The experimental results show that no surface damage appears until the irradiances go up to 234W/cm(2) for 100 ms laser ablation. This is consistent with the numerical findings. The initiation times of surface damage by the experiments at 234W/cm(2) and above agree well with the numerical results, which means that the model can efficiently predict the dislocation field. (C) 2020 Optical Society of America

引用

页码：6803 / 6808

页数：6

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