Electron spin dephasing in Mn-based II-VI diluted magnetic semiconductors

被引：17

作者：

Ben Cheikh, Z. ^{[1
]}

Cronenberger, S. ^{[1
]}

Vladimirova, M. ^{[1
]}

Scalbert, D. ^{[1
]}

Perez, F. ^{[2
]}

Wojtowicz, T. ^{[3
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5221, Lab Charles Coulomb, F-34095 Montpellier 05, France

[2] Univ Paris 06, CNRS, UMR 7588, Inst Nanosci Paris, F-75005 Paris, France

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 20期

关键词：

PRECESSION;

D O I：

10.1103/PhysRevB.88.201306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In various manganese-based II-VI diluted magnetic semiconductors and their quantum structures, the measured variations of electron spin dephasing time in an external magnetic field are conflicting with the most advanced spin relaxation theory based on quantum kinetic equations. We demonstrate, by time-resolved optical spin beat measurements performed on high-mobility n-doped CdMnTe quantum wells, that these contradictions are resolved if one takes into account the electron spin dephasing induced by laser heating of the manganese spins. We then provide a test of the spin relaxation theory in Mn-based quantum wells by a careful comparison with existing data, including our measurements. It turns out that the theory systematically underestimates the relaxation rates by a factor of 5.

引用

页数：4

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