Mobility of excess electrons in hexamethyldisiloxane and bis(trimethylsilyl)methane

被引：5

作者：

Holroyd, RA

Itoh, K

Nishikawa, M

机构：

[1] UNIV TOKYO, DEPT PURE & APPL SCI, TOKYO 153, JAPAN

[2] KANAGAWA INST TECHNOL, FAC ENGN, ATSUGI, KANAGAWA 24302, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 390卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(97)89463-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The mobility of excess electrons in bis(trimethylsilyl)methane is 63 cm(2)/Vs, and in hexamethyldisiloxane 22 cm(2)/Vs. these and related silicon-containing compounds, the mobility is greater than for those alkanes which have comparable free-ion yields.

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页码：233 / 236

页数：4

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