Mobility of excess electrons in hexamethyldisiloxane and bis(trimethylsilyl)methane

被引：5
作者：
Holroyd, RA
Itoh, K
Nishikawa, M
机构：
[1] UNIV TOKYO, DEPT PURE & APPL SCI, TOKYO 153, JAPAN
[2] KANAGAWA INST TECHNOL, FAC ENGN, ATSUGI, KANAGAWA 24302, JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 390卷 / 1-2期
关键词：
D O I：
10.1016/S0168-9002(97)89463-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The mobility of excess electrons in bis(trimethylsilyl)methane is 63 cm(2)/Vs, and in hexamethyldisiloxane 22 cm(2)/Vs. these and related silicon-containing compounds, the mobility is greater than for those alkanes which have comparable free-ion yields.
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页码：233 / 236
页数：4
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