Effect of pressure on the Kondo compound CeRhSb

CeRhSb crystallizes in the orthorhombic epsilon-TiNiSi-type structure. It has been shown that CeRhSb is a semiconductor type valence fluctuating compound such as Ce3Pt4Bi3. In the present work we measured the electrical resistivity and magnetoresistance of CeRhSb in the ranges, pressure P, 0 less than or equal to P less than or equal to 8 GPa, temperature T, 2.0 K less than or equal to T less than or equal to 300 K, and magnetic field H, 0 less than or equal to H less than or equal to 5 T. At 1 bar, rho(T) of CeRhSb shows a minimum (T-min) at 7.8 K, which may reflects opening of an energy gap. T-min increases with pressure and has a broad maximum centered near 4 GPa. The pressure dependence of T-min indicates that the gap disappears at pressures between 7 and 8 GPa. The magnetoresistance below 5 T is large and T positive under pressure up to 2.3 GPa.