Electron field emission of CNx thin films prepared by low pressure plasma enhanced chemical vapour deposition

CNx thin films were prepared using low pressure plasma enhanced chemical vapour deposition, and then bombarded by low-energy The compositions before and after N-2(+) bombardment were compared using x-ray photoelectron spectroscopy. The electron field emission characteristics of CNx thin films before and after N-2(+) bombardment were studied under the pressure of 10(-5)Pa. For the samples, the turn-on emission field decreased from 2.5 V/mum to 1.2 V/mum while the stable current density increased from 0.5 mA/cm(2) to a value larger than 1 mA/cm(2) before and after the bombardment. Our results illustrate that the field emission characteristics were improved after the bombardment of N-2(+).