Simultaneously grown single wall carbon nanotube channel and electrodes in a thin film transistor

被引:2
作者
Lee, Jinsup [1 ]
Kim, Bo-Hyun [1 ]
Kang, Seong Jun [2 ]
Hyun, Kar Tham [1 ]
Lee, Seok-Hee [3 ]
Jeon, Seokwoo [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, NanoCentury KI, Taejon 305701, South Korea
[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
FIELD-EFFECT TRANSISTORS; ALIGNED ARRAYS; TRANSPARENT; PERFORMANCE; DIELECTRICS;
D O I
10.1557/mrc.2012.12
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By chemical vapor deposition, aligned single wall carbon nanotubes (SWNTs) and a network of SWNTs are simultaneously grown as the channel and the source-drain electrodes of thin film transistors (TFTs). The increase of aligned SWNTs increases the channel conductance without changing the contact resistance. However, the increase of network-type SWNTs from 19 to 32.5 (SWNTs/mu m) decreases the contact resistance fivefold. The contact resistance of all-SWNT TFT is three times lower compared with that of an SWNT TFT using metal electrodes. The all-SWNT TFTs transferred on polyethylene terephthalate (PET) show a transparency of >80% in the visible range of wavelengths.
引用
收藏
页码:79 / 83
页数:5
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