Conductive Boundary Layer in CaCu3Ti4O12 with Giant-Dielectric-Response

被引:12
作者
Fu, Desheng [1 ,2 ]
Arima, Yosuke [2 ]
Taniguchi, Hiroki [2 ]
Taniyama, Tomoyasu [2 ]
Itoh, Mitsuru [2 ]
Yu, Jianding [3 ]
Koshihara, Shin-Ya [1 ,4 ]
机构
[1] Japan Sci & Technol Agcy JST, Exploratory Res Adv Technol ERATO, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Japan Aerosp Explorat Agcy, ISS Sci Project Off, Tsukuba, Ibaraki 3058505, Japan
[4] Tokyo Inst Technol, Dept Chem & Mat Sci, Meguro Ku, Tokyo 1528551, Japan
关键词
D O I
10.1080/00150190601187500
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dense polycrystalline samples of CaCu3Ti4O12 (CCTO) were prepared by solid-state reaction method under a high hydraulic pressure of 700 MPa, and characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy (AFM). Probing of the conduction path in nanoscale by AFM reveals that the grain boundary layer is conductive in CCTO. Therefore, reported giant-dielectric response in CCTOcan not be understood by the model of conducting grains surrounded by insulating grain boundaries, which is usually used for the explanation of conventional internal barrier layer capacitors.
引用
收藏
页码:140 / 144
页数:5
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