Novel InGaZnO inverters utilizing film profile engineering

被引：5

作者：

Lin, Horng-Chih ^{[1
,2
,3
]}

Wu, Ming-Hung ^{[1
,2
]}

Chan, Chin-Wen ^{[1
,2
]}

Lyu, Rong-Jhe ^{[1
,2
]}

Huang, Tiao-Yuan ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 08期

关键词：

TRANSISTORS;

D O I：

10.7567/JJAP.54.081102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)-based inverters with a resistor-or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (V-DD) of 5V. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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