Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors

被引：54

作者：

Sabri, Mardhiah M. ^{[1
]}

Jung, Joohye ^{[1
]}

Yoon, Doo Hyun ^{[1
]}

Yoon, Seokhyun ^{[1
]}

Tak, Young Jun ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 28期

基金：

新加坡国家研究基金会;

关键词：

HIGH-PERFORMANCE; LOW-TEMPERATURE; HYDROGEN-PEROXIDE; 2-METHOXYETHANOL; SPECTROSCOPY; FABRICATION; ULTRAVIOLET; STABILITY;

D O I：

10.1039/c5tc01457c

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solution-processed indium oxide TFTs were fabricated by hydroxyl radical-assisted (HRA) decomposition and oxidation. The results show that decomposition and oxidation of carbon is more substantial than metal hydroxides, leading to the elimination of organic residues, correlated to a low interface trap density (S.S. = 0.45 V dec(-1), N-T = 1.11 x 10(12) cm(-2)) in the device. The resultant HRA indium oxide TFTs exhibit improved electrical characteristics such as the mobility, the on/off current ratio, and the subthreshold swing as well as bias stabilities under PBS and NBS conditions.

引用

页码：7499 / 7505

页数：7

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