Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors

被引：54
作者：
Sabri, Mardhiah M. [1 ]
Jung, Joohye [1 ]
Yoon, Doo Hyun [1 ]
Yoon, Seokhyun [1 ]
Tak, Young Jun [1 ]
Kim, Hyun Jae [1 ]
机构：
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 28期
基金：
新加坡国家研究基金会;
关键词：
HIGH-PERFORMANCE; LOW-TEMPERATURE; HYDROGEN-PEROXIDE; 2-METHOXYETHANOL; SPECTROSCOPY; FABRICATION; ULTRAVIOLET; STABILITY;
D O I：
10.1039/c5tc01457c
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Solution-processed indium oxide TFTs were fabricated by hydroxyl radical-assisted (HRA) decomposition and oxidation. The results show that decomposition and oxidation of carbon is more substantial than metal hydroxides, leading to the elimination of organic residues, correlated to a low interface trap density (S.S. = 0.45 V dec(-1), N-T = 1.11 x 10(12) cm(-2)) in the device. The resultant HRA indium oxide TFTs exhibit improved electrical characteristics such as the mobility, the on/off current ratio, and the subthreshold swing as well as bias stabilities under PBS and NBS conditions.
引用
收藏
页码：7499 / 7505
页数：7
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