Atomic layer deposition of TiO2-xNx thin films for photocatalytic applications

被引：109
作者：
Pore, V
Heikkilä, M
Ritala, M
Leskelä, M
Areva, S
机构：
[1] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland
[2] Abo Akad Univ, Dept Phys Chem, FI-20500 Turku, Finland
来源：
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY | 2006年 / 177卷 / 01期
关键词：
photocatalysis; titanium dioxide; nitrogen doping; ALD; thin films;
D O I：
10.1016/j.jphotochem.2005.05.013
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Titanium dioxide (TiO2) is recognized as the most efficient photocatalytic material, but due to its large band gap energy it call only be excited by UV irradiation. Doping TiO2 with nitrogen is a promising modification method for the utilization of visible light in photocatalysis. In this work, nitrogen-doped TiO2 films were grown by atomic layer deposition (ALD) using TiCl4, NH3 and water as precursors. All growth experiments were done at 500 degrees C. The films were characterized by XRD, XPS, SEM and UV-vis spectrometry. The influence of: nitrogen doping oil the photocatalytic activity of the films in the UV and visible light was evaluated by the degradation of a thin layer of stearic acid and by linear sweep voltammetry. Light-induced superhydrophilicity of the films was also studied. It was found that the films could be excited by visible light, but they also suffered from increased recombination. (c) 2005 Elsevier B.V. All rights reserved.
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页码：68 / 75
页数：8
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