X-ray scattering by porous silicon modulated structures

被引:2
作者
Lomov, A. A. [1 ]
Punegov, V. I. [2 ]
Karavanskii, V. A. [3 ]
Vasil'ev, A. L. [4 ]
机构
[1] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia
[2] Russian Acad Sci, Komi Res Ctr, Ural Branch, Syktyvkar 167610, Russia
[3] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
[4] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia
基金
俄罗斯基础研究基金会;
关键词
DIFFRACTION; MORPHOLOGY;
D O I
10.1134/S1063774511060162
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A multilayered porous structure formed as a result of the anodization of a Si(111)(Sb) substrate in an HF:C2H5OH (1: 2) solution with a periodically alternating current has been investigated by high-resolution X-ray diffraction. It is established that, despite 50% porosity, a thickness of 30 mu m, and significant strain (4 x 10(-3)), the porous silicon structure consists mainly of coherent crystallites. A model of coherent scattering from a multilayered periodic porous structure is proposed within the dynamic theory of diffraction. It is shown that the presence of gradient strains of 5 x 10(-4) or higher leads to phase loss upon scattering from porous superlattices and the suppression of characteristic satellites in rocking curves.
引用
收藏
页码:185 / 192
页数:8
相关论文
共 15 条
[1]  
[Anonymous], 2004, HIGH RESOLUTION XRAY, DOI DOI 10.1007/978-1-4757-4050-9
[2]  
[Anonymous], PISMA ZH TEKH FIZ
[3]  
[Anonymous], POVERKHNOST
[4]  
[Anonymous], LASER PHYS
[5]   Thin layers and multilayers of porous silicon: X-ray diffraction investigation [J].
Buttard, D ;
Bellet, D ;
Dolino, G ;
Baumbach, T .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :5814-5822
[6]   Simultaneous analysis of double-crystal X-ray rocking curves from a set of crystallographic planes [J].
Chuev, M. A. ;
Lomov, A. A. ;
Imamov, R. M. .
CRYSTALLOGRAPHY REPORTS, 2006, 51 (02) :178-191
[7]   Birefringence and anisotropic optical absorption in porous silicon [J].
Efimova, A. I. ;
Krutkova, E. Yu. ;
Golovan, L. A. ;
Fomenko, M. A. ;
Kashkarov, P. K. ;
Timoshenko, V. Yu. .
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2007, 105 (03) :599-609
[8]   X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots [J].
Faleev, NN ;
Egorov, AY ;
Zhukov, AE ;
Kovsh, AR ;
Mikhrin, SS ;
Ustinov, VM ;
Pavlov, KM ;
Punegov, VI ;
Tabuchi, M ;
Takeda, Y .
SEMICONDUCTORS, 1999, 33 (11) :1229-1237
[9]   Silicon Porosification: State of the Art [J].
Korotcenkov, G. ;
Cho, B. K. .
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2010, 35 (03) :153-260
[10]   On the morphology and the electrochemical formation mechanism of mesoporous silicon [J].
Lehmann, V ;
Stengl, R ;
Luigart, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :11-22