Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

被引：13

作者：

Muhammad, Fida ^{[1
,2
]}

Tahir, Muhammad ^{[1
,3
]}

Zeb, Muhammad ^{[1
]}

Kalasad, Muttanagoud N. ^{[4
]}

Said, Suhana Mohd ^{[3
]}

Sarker, Mahidur R. ^{[5
]}

Sabri, Mohd Faizul Mohd ^{[5
]}

Ali, Sawal Hamid Md ^{[6
]}

机构：

[1] Abdul Wali Khan Univ Mardan, Fac Phys & Numer Sci, Dept Phys, Mardan 23200, Khyber Pakhtunk, Pakistan

[2] Univ Glasgow, Sch Engn, Elect & Nanoscale Engn, Glasgow G12 8QQ, Lanark, Scotland

[3] Univ Malaya, Dept Elect Engn, Fac Engn, Kuala Lumpur 50603, Malaysia

[4] Davangere Univ, Dept Phys, Davangere 577007, Karnataka, India

[5] Univ Malaya, Dept Mech Engn, Fac Engn, Kuala Lumpur 50603, Malaysia

[6] Univ Kebangsaan Malaysia, Dept Elect Elect & Syst Engn, Fac Engn & Built Environm, Bangi 43600, Malaysia

来源：

SCIENTIFIC REPORTS | 2020年 / 10卷 / 01期

关键词：

ELECTRICAL CHARACTERIZATION; SEMICONDUCTOR NANOCRYSTALS; ELECTRONIC-PROPERTIES; CURRENT-VOLTAGE; PERFORMANCE; TRANSISTORS; HETEROJUNCTION; FABRICATION; CAPACITANCE; PARAMETERS;

D O I：

10.1038/s41598-020-61602-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

This paper reports the potential application of cadmium selenide (CdSe) quantum dots (QDs) in improving the microelectronic characteristics of Schottky barrier diode (SBD) prepared from a semiconducting material poly-(9,9-dioctylfluorene) (F8). Two SBDs, Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO, are fabricated by spin coating a 10wt% solution of F8 in chloroform and 10:1wt% solution of F8:CdSe QDs, respectively, on a pre-deposited poly(3-hexylthiophene) (P3HT) on indium tin oxide (ITO) substrate. To study the electronic properties of the fabricated devices, current-voltage (I-V) measurements are carried out at 25 degrees C in dark conditions. The I-V curves of Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO SBDs demonstrate asymmetrical behavior with forward bias current rectification ratio (RR) of 7.42 +/- 0.02 and 142 +/- 0.02, respectively, at +/- 3.5V which confirm the formation of depletion region. Other key parameters which govern microelectronic properties of the fabricated devices such as charge carrier mobility (mu), barrier height (phi (b)), series resistance (R-s) and quality factor (n) are extracted from their corresponding I-V characteristics. Norde's and Cheung functions are also applied to characterize the devices to study consistency in various parameters. Significant improvement is found in the values of R-s, n, and RR by 3, 1.7, and 19 times, respectively, for Ag/F8-CdSe QDs/P3HT/ITO SBD as compared to Ag/F8/P3HT/ITO. This enhancement is due to the incorporation of CdSe QDs having 3-dimensional quantum confinement and large surface-to-volume area. Poole-Frenkle and Richardson-Schottky conduction mechanisms are also discussed for both of the devices. Morphology, optical bandgap (1.88 +/- 0.5eV) and photoluminescence (PL) spectrum of CdSe QDs with a peak intensity at 556nm are also reported and discussed.

引用

页数：13

共 48 条

[1] The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode [J].