Misfit dislocations of anisotropic magnetoresistant Nd0.45Sr0.55MnO3 thin films grown on SrTiO3 (110) substrates

被引:12
作者
Tang, Y. L. [1 ]
Zhu, Y. L. [1 ]
Meng, H. [1 ]
Zhang, Y. Q. [1 ]
Ma, X. L. [1 ]
机构
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
基金
中国国家自然科学基金;
关键词
High resolution (scanning) transmission electron microscopy; Misfit dislocations; Perovskite oxides; Misfit relaxation; PEROVSKITE FILMS; ND1-XSRXMNO3; TRANSITION; EVOLUTION;
D O I
10.1016/j.actamat.2012.06.031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nd0.45Sr0.55MnO3 is an A-type antiferromagnetic manganite showing obvious angular-dependent magnetoresistance, which can be tuned by misfit strain. The misfit strain relaxation of Nd0.45Sr0.55MnO3 thin films is of both fundamental and technical importance. In this paper, microstructures of epitaxial Nd0.45Sr0.55MnO3 thin films grown on SrTiO3 (110) substrates by pulsed laser deposition were investigated by means of (scanning) transmission electron microscopy. The Nd0.45Sr0.55MnO3 thin films exhibit a two-layered structure: a continuous perovskite layer epitaxial grown on the substrate followed by epitaxially grown columnar nanostructures. An approximately periodic array of misfit dislocations is found along the interface with line directions of both < 111 > and [001]. High-resolution (scanning) transmission electron microscopy reveals that all the misfit dislocations possess a < 110 >-type Burgers vectors. A formation mechanism based on gliding or climbing of the dislocations is proposed to elucidate this novel misfit dislocation configuration. These misfit dislocations have complex effects on the strain relaxation and microstructure of the films, and thus their influence needs further consideration for heteroepitaxial perovskite thin film systems, especially for films grown on substrates with low-symmetry surfaces such as SrTiO3 (110) and (111), which are attracting attention for their potentially new functions. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:5975 / 5983
页数:9
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