Controllable valley filter in graphene topological line defect with magnetic field

被引:8
作者
Ren, C. D. [1 ]
Lu, W. T. [2 ]
Zhou, B. H. [3 ]
Li, Y. F. [4 ]
Li, D. Y. [2 ]
Wang, S. K. [5 ,6 ]
Tian, H. Y. [2 ]
机构
[1] Zunyi Normal Coll, Dept Phys, Zunyi 563002, Guizhou, Peoples R China
[2] Linyi Univ, Sch Phys & Elect Engn, Linyi 276005, Shandong, Peoples R China
[3] Shaoyang Univ, Dept Phys, Shaoyang 422001, Peoples R China
[4] Linyi Univ, Sch Mech & Vehicle Engn, Linyi 276005, Shandong, Peoples R China
[5] Jinling Inst Technol, Coll Sci, Nanjing 211169, Peoples R China
[6] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
关键词
line defect; graphene; valley polarization; POLYCRYSTALLINE GRAPHENE;
D O I
10.1088/1361-648X/ab8ec9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The extended line defect of graphene is an extraordinary candidate in valleytronics while the high valley polarization can only occur for electrons with high incidence angles which brings about tremendous challenges to experimental realization. In this paper, we propose a novel quantum mechanism to filter one conical valley state in the line defect of graphene by applying a local magnetic field. It is found that due to the movement of the Dirac points, the transmission profiles of the two valleys are shifted along the injection-angle axis at the same pace, resulting in the peak transmission of one valley state being reduced drastically while remaining unaffected for the other valley state, which induces nearly perfect valley polarization. The valley polarization effect can occur for all the incident angle and plays a key role in graphene valleytronics.
引用
收藏
页数:7
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